Unipolar Bistable Switching of Organic Non-Volatile Memory Devices with Poly(styrene-co-styrenesulfonic acid Na)

被引：3

作者：

Ji, Yongsung ^{[2
]}

Cho, Byungjin ^{[2
]}

Song, Sunghoon ^{[2
]}

Choe, Minhyeok ^{[2
]}

Kim, Tae-Wook ^{[2
]}

Kim, Joon-Seop ^{[3
]}

Choi, Byung-Sang ^{[1
]}

Lee, Takhee ^{[2
]}

机构：

[1] Chosun Univ, Dept Met & Mat Engn, Kwangju 501759, South Korea

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[3] Chosun Univ, Dept Polymer Sci & Engn, Kwangju 501759, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 02期

关键词：

Organic Memory; Non-Volatile Memory; Unipolar Switching; THIN-FILM-TRANSISTOR; ELECTRICAL BISTABILITY; SOLAR-CELLS; POLYMER; MECHANISM; IONOMERS; VOLTAGE; SYSTEM;

D O I：

10.1166/jnn.2011.3381

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrated unipolar organic bistable memory devices with 8 x 8 cross-bar array type structure. The active material for the organic non-volatile memory devices is poly(styrene-co-styrenesulfonic acid Na) (PSSANa). From the electrical measurements of the PSSANa organic memory devices, we observed rewritable unipolar switching behaviors with a stable endurance and narrow cumulative probability. Also the PSSANa memory devices exhibited a uniform cell-to-cell switching with a high ON/OFF ratio of similar to 10(5) and good retention time of similar to 10(4) seconds without significant degradation.

引用

页码：1385 / 1388

页数：4

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