New source of stacking faults in heteroepitaxial systems

被引：9
作者：
Lim, SH
Shindo, D
机构：
[1] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan
来源：
PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 17期
关键词：
D O I：
10.1103/PhysRevLett.86.3795
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new stacking fault formation mechanism has been observed for the first time in ZnO/LiTaO3 heteroepitaxial films. Nigh resolution electron microscopy studies combined with electron diffraction and numerical image computation suggest that the observed type II intrinsic stacking faults in an epitaxial film can be dominantly formed as a result of tilting of the lattices between films and substrate required to maintain a particular orientation relationship.
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收藏
页码：3795 / 3798
页数：4
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