Scaling Reliability and Modeling of Ferroelectric Capacitors

被引：6

作者：

Acosta, Antonio G. ^{[1
]}

Rodriguez, John ^{[2
]}

Obradovic, Borna ^{[2
]}

Summerfelt, Scott ^{[2
]}

San, Tamer ^{[2
]}

Green, Keith ^{[2
]}

Moise, Ted ^{[2
]}

Krishnan, Srikanth ^{[2
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32601 USA

[2] Texas Instruments Inc, Analog Technol dev, Analog Technol Dev SPICE Modeling Lab, Dallas, TX 75265 USA

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

FRAM; SPICE model; reliability; ferroelectric capacitor;

D O I：

10.1109/IRPS.2010.5488748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on reliability properties of MOCVD PZT ferroelectric capacitors as a function of film thickness. Data is presented for fatigue, thermal depolarization, and imprint. It is important to be able to model these parameters as they can significantly affect the switching polarization, which in turn affects the signal margin of an FRAM circuit. A ferroelectric SPICE model is presented that can be used to accurately simulate hysteresis and switching polarization behavior. This model agrees with experimental data and can be used to simulate FRAM circuit behavior through "end of life".

引用

页码：689 / 693

页数：5

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