A multiresolution 100-GOPS 4-Gpixels/s programmable smart vision sensor for multisense imaging

被引:23
作者
Lindgren, L
Melander, J
Johansson, R
Möller, B
机构
[1] IVP Integrated Vis Prod AB, N-0349 Oslo, Norway
[2] Metrima AB, S-58110 Linkoping, Sweden
关键词
APS; CMOS image sensors; laser triangulation; machine vision; MAPP; multiresolution; multisense; smart vision sensors; 3-D;
D O I
10.1109/JSSC.2005.848029
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a multiresolution general-purpose high-speed machine vision sensor with on-chip image processing capabilities. The sensor comprises an innovative multiresolution sensing area, 1536 A/D converters, and a SIMD array of 1536 bit-serial processors with corresponding memory. The sensing area consists of an area part with 1536 x 512 pixels, and a line-scan part with a set of rows with 3072 pixels each. The SIMD processor array can deliver more than 100 GOPS sustained and the on-chip pixel-analysing rate can be as high as 4 G pixels/s. The sensor is ideal for high-speed multisense imaging where, e.g., color, greyscale, internal material light scatter, and 3-D profiles are captured simultaneously. When running only 3-D laser triangulation, a data rate of more than 20 000 profiles/s can be achieved when delivering 1536 range values per profile with 8 bits of range resolution. Experimental results showing very good image characteristics and a good digital to analog noise isolation are presented.
引用
收藏
页码:1350 / 1359
页数:10
相关论文
共 21 条
[11]   A high-speed, 240-frames/s, 4.1-mpixel CMOS sensor [J].
Krymski, AI ;
Bock, NE ;
Tu, NR ;
Van Blerkom, D ;
Fossum, ER .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (01) :130-135
[12]   Analytical charge collection and MTF model for photodiode-based CMOS imagers [J].
Lin, CSS ;
Mathur, BP ;
Chang, MCF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (05) :754-761
[13]  
LINDGREN L, 2004, P IEEE INT S CIRC SY, V4, P392
[14]   A 375x365 high-speed 3-D range finding image sensor using row-parallel search architecture and multisampling technique [J].
Oike, Y ;
Ikeda, M ;
Asada, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (02) :444-453
[15]   Design and implementation of real-time 3-D image sensor with 640 x 480 pixel resolution [J].
Oike, Y ;
Ikeda, M ;
Asada, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (04) :622-628
[16]   DESIGN TECHNIQUES FOR HIGH-SPEED, HIGH-RESOLUTION COMPARATORS [J].
RAZAVI, B ;
WOOLEY, BA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (12) :1916-1926
[17]   Active area shape influence on the dark current of CMOS imagers. [J].
Shcherback, I ;
Belenky, A ;
Yadid-Pecht, O .
SENSORS AND CAMERA SYSTEMS FOR SCIENTIFIC, INDUSTRIAL, AND DIGITAL PHOTOGRAPHY APPLICATIONS III, 2002, 4669 :117-124
[18]   MEASUREMENT AND ANALYSIS OF CHARGE INJECTION IN MOS ANALOG SWITCHES [J].
SHIEH, JH ;
PATIL, M ;
SHEU, BJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (02) :277-281
[19]   Analysis of temporal noise in CMOS photodiode active pixel sensor [J].
Tian, H ;
Fowler, B ;
Gamal, AF .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (01) :92-101
[20]  
Wikner J. J., 2001, THESIS LINKOPING U S