Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes

被引：9

作者：

Chang, Jih-Yuan ^{[1
]}

Kuo, Yen-Kuang ^{[1
]}

Tsai, Miao-Chan ^{[2
]}

机构：

[1] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

[2] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 03期

关键词：

device simulations; efficiency droop; InGaN; light-emitting diodes; WURTZITE SEMICONDUCTORS; PHASE-SEPARATION; BAND PARAMETERS; INGAN/GAN; POLARIZATION; MODEL; HETEROSTRUCTURES; SPECTROSCOPY; LASERS; INN;

D O I：

10.1002/pssa.201026369

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical properties of the InGaN/(In) GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：729 / 734

页数：6

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