Extended hydrodynamical models for charge transport in Si

被引：0
|
作者：
Beneduci, Roberto [1 ,2 ]
Mascali, Giovanni [1 ,2 ]
Romano, Vittorio [3 ]
机构：
[1] Univ Calabria, I-87030 Commenda Di Rende, Italy
[2] INFN Gruppo c Cosenza, Commenda Di Rende, Italy
[3] Catania Univ, Catania, Italy
来源：
SCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING | 2007年 / 11卷
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中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
In this paper we present a hierarchy of extended hydrodynamical models for electron transport in Silicon, which differ from each other for the number of scalar and vector moments of the electron distribution function used as state variables. The closure of the moment equations is achieved by means of the Maximum Entropy Principle. The main scattering mechanisms between electrons and phonons are taken into account. An application to the case of bulk Silicon is presented.
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页码：357 / +
页数：3
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