Wetting and infiltration of carbon by liquid silicon

被引：68

作者：

Dezellus, O

Jacques, S

Hodaj, F

Eustathopoulos, N

机构：

[1] UCBL, UMR 5615, LMI, F-69622 Villeurbanne, France

[2] UJF, ENSEEG, INPG, LTPCM,CNRS,UMR 5614, F-38402 St Martin Dheres, France

来源：

JOURNAL OF MATERIALS SCIENCE | 2005年 / 40卷 / 9-10期

关键词：

D O I：

10.1007/s10853-005-1950-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The wettability of carbon materials by molten silicon was investigated at 1430 degrees C under vacuum by using the dispensed drop variant of the sessile drop technique. The results are compared with data in the literature and used to contribute to a comprehensive understanding of wetting in the liquid-Si/solid-C system. Consequences on the dynamics of Liquid Silicon Infiltration (LSI) processes are discussed. (C) 2005 Springer Science + Business Media, Inc.

引用

页码：2307 / 2311

页数：5

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