Efficient growth of high-quality graphene films on Cu foils by ambient pressure chemical vapor deposition

被引：156

作者：

Gao, Libo ^{[1
]}

Ren, Wencai ^{[1
]}

Zhao, Jinping ^{[1
]}

Ma, Lai-Peng ^{[1
]}

Chen, Zongping ^{[1
]}

Cheng, Hui-Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 18期

关键词：

Compendex;

D O I：

10.1063/1.3512865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed an ambient pressure chemical vapor deposition (CVD) for rapid growth of high-quality graphene films on Cu foils. The quality and growth rate of graphene films are dramatically increased with decreasing H-2 concentration. Without the presence of H-2, continuous graphene films are obtained with a mean sheet resistance of < 350 Omega/sq and light transmittance of 96.3% at 550 nm. Because of the ambient pressure, rapid growth rate, absence of H-2 and readily available Cu foils, this CVD process enables inexpensive and high-throughput growth of high-quality graphene films. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3512865]

引用

页数：3

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