Aligned carbon nanotube film self-organized on a SiC wafer

被引：52

作者：

Kusunoki, M ^{[1
]}

Shibata, J ^{[1
]}

Rokkaku, M ^{[1
]}

Hirayama, T ^{[1
]}

机构：

[1] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 456, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 5B期

关键词：

carbon nanotube film; alpha-SiC wafer; decomposition; field emission; transmission electron microscopy; high temperature;

D O I：

10.1143/JJAP.37.L605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An aligned carbon nanotube film was fabricated on the surface of an alpha-SiC wafer by heating at 1700 degrees C for 30 min. in a vacuum electric furnace due to the decomposition of SiC by selected desorption. It was found to be easy to produce a large-area carbon nanotube film on the SiC substrate. The (0002) lattice distance of graphite constructing the CNTs was obtained to be 0.344 nm from the electron diffraction pattern.

引用

页码：L605 / L606

页数：2

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