The structural and electrical properties of oriented SrTiO3 films prepared by metal organic deposition method

被引：13

作者：

Wang, Xiaofei ^{[1
,2
]}

Lu, Xiaomei ^{[1
]}

Bo, Huifeng ^{[1
]}

Liu, Yaoyang ^{[1
]}

Shen, Yanchi ^{[1
]}

Wu, Xiaobo ^{[1
]}

Cai, Wei ^{[1
]}

Kan, Yi ^{[1
]}

Zhang, Chao ^{[1
]}

Liu, Yunfei ^{[1
]}

Huang, Fengzhen ^{[1
]}

Zhu, Jinsong ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471003, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 35-36期

基金：

美国国家科学基金会;

关键词：

Oriented SrTiO3 film; Metal organic deposition; Electrical property; THIN-FILMS;

D O I：

10.1016/j.ssc.2010.06.035

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Strontium titanate films with high a-axis orientation [a((100)) = 94.1%] and random orientation were deposited on (111) Pt/Ti/SiO2/Si substrates by a concentration controlling of the precursor solution during the metal organic deposition process. Topography of samples was investigated by atomic force microscopy after annealing at 800 degrees C. X-ray diffraction found that the degree of a-axis orientation increased with increasing annealing temperature. The leakage current and the dielectric property were strongly dependent on the film orientation, and the possible causes of orientation dependence were discussed. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1637 / 1640

页数：4

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