Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

被引：102

作者：

Saito, Wataru ^{[1
]}

Kakiuchi, Yorito ^{[1
]}

Nitta, Tomohiro ^{[1
]}

Saito, Yasunobu ^{[1
]}

Noda, Takao ^{[1
]}

Fujimoto, Hidetoshi ^{[1
]}

Yoshioka, Akira ^{[1
]}

Ohno, Tetsuya ^{[1
]}

Yamaguchi, Masakazu ^{[1
]}

机构：

[1] Toshiba Co Ltd, Semiconductor Co, Kawasaki, Kanagawa 2128583, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 07期

关键词：

GaN; HEMT; high voltage; power semiconductor device; ALGAN/GAN HFETS; OPERATION; GATE;

D O I：

10.1109/LED.2010.2048741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Four types of the field-plate ( FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in high-voltage GaN-HEMTs. The ON-resistance increase caused by current collapse phenomena is dramatically reduced by the single-gate-FP and dual-FP structures compared with the source-FP structure, because the gate-edge electric field was reduced by the gate-FP electrode. The dual-FP structure was slightly more effective to suppress the collapse phenomena than the single-gate-FP structure, because the two-step FP structure relaxes the electric-field concentration at the FP edge. These results show that the gate-edge peak strongly affects the ON-resistance modulation. Although the FP edge peak also causes the collapse phenomena, its influence is weak.

引用

页码：659 / 661

页数：3

共 12 条

[1] MULTISTEP FIELD PLATES FOR HIGH-VOLTAGE PLANAR P-N-JUNCTIONS [J].

FEILER, W ;

FALCK, E ;

GERLACH, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) :1514-1520

[2]

Ikeda N, 2009, PROC INT SYMP POWER, P251, DOI 10.1109/ISPSD.2009.5158049

[3]

*ISE INT SYST ENG, 2002, ISE TCAD MAN 11

[4] Normally-off AlGaN/GaN HFETs using NiOx Gate with Recess [J].

Kaneko, Nobuo ;

Machida, Osamu ;

Yanagihara, Masataka ;

Iwakami, Shinichi ;

Baba, Ryohei ;

Goto, Hirokazu ;

Iwabuchi, Akio .

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2009, :25-28

[5] Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator [J].

Karmalkar, S ;

Mishra, UK .

SOLID-STATE ELECTRONICS, 2001, 45 (09) :1645-1652

[6] AlGaN/GaN HEMTs - An overview of device operation and applications [J].

Mishra, UK ;

Parikh, P ;

Wu, YF .

PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1022-1031

[7] A NOVEL HIGH-VOLTAGE HIGH-SPEED MESFET USING A STANDARD GAAS DIGITAL IC PROCESS [J].

MOK, PKT ;

SALAMA, CAT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) :246-250

[8] Current collapseless high-voltage GaN-HEMT and its 50-W boost converter operation [J].

Saito, Wataru ;

Kuraguchi, Masahiko ;

Takada, Yoshiharu ;

Tsuda, Kunio ;

Saito, Yasunobu ;

Omura, Ichiro ;

Yamaguchi, Masakazu .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :869-+

[9] Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized field-plate structure [J].

Saito, Wataru ;

Kakiuchi, Yorito ;

Saito, Yasunobu ;

Tsuda, Kunio ;

Omura, Ichiro ;

Yamaguchi, Masakazu .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (08) :1825-1830

[10] AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor on 4 in. silicon substrate for high breakdown characteristics [J].

Selvaraj, S. Lawrence ;

Ito, Tsuneo ;

Terada, Yutaka ;

Egawa, Takashi .

APPLIED PHYSICS LETTERS, 2007, 90 (17)

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