Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

被引：99

作者：

Saito, Wataru ^{[1
]}

Kakiuchi, Yorito ^{[1
]}

Nitta, Tomohiro ^{[1
]}

Saito, Yasunobu ^{[1
]}

Noda, Takao ^{[1
]}

Fujimoto, Hidetoshi ^{[1
]}

Yoshioka, Akira ^{[1
]}

Ohno, Tetsuya ^{[1
]}

Yamaguchi, Masakazu ^{[1
]}

机构：

[1] Toshiba Co Ltd, Semiconductor Co, Kawasaki, Kanagawa 2128583, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 07期

关键词：

GaN; HEMT; high voltage; power semiconductor device; ALGAN/GAN HFETS; OPERATION; GATE;

D O I：

10.1109/LED.2010.2048741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Four types of the field-plate ( FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in high-voltage GaN-HEMTs. The ON-resistance increase caused by current collapse phenomena is dramatically reduced by the single-gate-FP and dual-FP structures compared with the source-FP structure, because the gate-edge electric field was reduced by the gate-FP electrode. The dual-FP structure was slightly more effective to suppress the collapse phenomena than the single-gate-FP structure, because the two-step FP structure relaxes the electric-field concentration at the FP edge. These results show that the gate-edge peak strongly affects the ON-resistance modulation. Although the FP edge peak also causes the collapse phenomena, its influence is weak.

引用

页码：659 / 661

页数：3

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