Preparation of low dielectric constant silicon containing fluorocarbon films by plasma enhanced chemical vapor deposition

被引：12

作者：

Jin, YY ^{[1
]}

Kim, K ^{[1
]}

Lee, GS ^{[1
]}

机构：

[1] Louisiana State Univ, Dept Elect & Comp Engn, Solid State Lab, Baton Rouge, LA 70803 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 01期

关键词：

D O I：

10.1116/1.1342009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon dielectric films containing fluorocarbons were prepared via plasma enhanced chemical vapor deposition using Si2H6 and CF4 as precursors. A low dielectric constant (k) was observed for rf power of 200 W and flow rate ratio of CF4/Si2H6 at 16.5. An average breakdown field strength was also observed. This layer was found to be potential candidate for low-k material for application to interlayer dielectrics.

引用

页码：314 / 316

页数：3

共 12 条

[1] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

BATEY, J ;

TIERNEY, E .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3136-3145

[2] Application of fluorinated amorphous carbon thin films for low dielectric constant interlayer dielectrics [J].

Endo, K ;

Tatsumi, T ;

Matsubara, Y ;

Horiuchi, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A) :1809-1814

[3] Plasma fluorination of polyimide thin films [J].

Endo, K ;

Tatsumi, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (06) :3134-3137

[4] Novel low k dielectrics based on diamondlike carbon materials [J].

Grill, A ;

Patel, V ;

Jahnes, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (05) :1649-1653

[5] Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materials [J].

Kim, K ;

Kwon, DH ;

Nallapati, G ;

Lee, GS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1998, 16 (03) :1509-1513

[6] Effect of fluorine on chemical and electrical properties of room temperature oxide films prepared by plasma enhanced chemical vapor deposition [J].

Kim, K ;

Song, J ;

Kwon, D ;

Lee, GS .

APPLIED PHYSICS LETTERS, 1998, 72 (10) :1247-1249

[7] Interconnect technology trend for microelectronics [J].

Liu, RC ;

Pai, CS ;

Martinez, E .

SOLID-STATE ELECTRONICS, 1999, 43 (06) :1003-1009

[8] Device physics -: In search of low-k dielectrics [J].

Miller, RD .

SCIENCE, 1999, 286 (5439) :421-+

[9]

PETERS I, 1999, SEMICOND INT, V22, P46

[10]

Peters L., 1999, Semiconductor International, V22

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