Ultrafast dynamics of type-II GaSb/GaAs quantum dots

被引：2
|
作者：
Komolibus, K. [1 ,2 ]
Piwonski, T. [1 ,2 ]
Gradkowski, K. [1 ,2 ]
Reyner, C. J. [3 ,4 ]
Liang, B. [3 ,4 ]
Huyet, G. [1 ,2 ,5 ]
Huffaker, D. L. [3 ,4 ]
Houlihan, J. [6 ]
机构：
[1] Cork Inst Technol, Ctr Adv Photon & Proc Anal, Cork, Ireland
[2] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[4] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA
[5] Natl Res Univ Informat Technol Mech & Opt, St Petersburg, Russia
[6] Waterford Inst Technol, Sch Sci, Waterford, Ireland
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 03期
关键词：
D O I：
10.1063/1.4906106
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures. (C) 2015 AIP Publishing LLC.
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页数：4
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