X-ray diagnostics of P-HEMT AlGaAs/InGaAs/GaAs structures

被引：1

作者：

Subbotin, I. A.

Chuev, M. A.

Pashaev, E. M.

Imamov, R. M.

Galiev, G. B.

Tikhomirov, S. A.

Kacerovsky, P.

机构：

[1] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 119333, Russia

[2] Russian Acad Sci, Inst Phys & Technol, Moscow 117218, Russia

[3] Russian Res Ctr, IV Kurchatov Atom Energy Inst, Moscow 123182, Russia

[4] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia

[5] Acad Sci Czech Republic, Inst Radio Engn & Elect, CR-18251 Prague, Czech Republic

来源：

CRYSTALLOGRAPHY REPORTS | 2007年 / 52卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063774507040074

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The structural characteristics of the P-HEMT AlGaAs/InGaAs/GaAs heterostructure have been studied bv high-resolution X-ray diffractometry. The parameters of the heterostructure layers were determined by simultaneous analysis of the X-ray reflection curves for the (004) and ( 113) crystallographic planes. Inter- face diffusion has been established for the InyGa1-y. As quantum well and the Al-x,Ga1-x As spacer layer, which arc characterized by reconstructed profiles of the lattice parameter distribution and anisotropic distribution of random displacements in the layer plane and in the perpendicular direction.

引用

页码：611 / 617

页数：7

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