Performance of EUV photoresists on the ALS micro exposure tool

被引：13

作者：

Köhler, T ^{[1
]}

Brainard, RL ^{[1
]}

Naulleau, PP ^{[1
]}

Van Steenwinckel, D ^{[1
]}

Lammers, JH ^{[1
]}

Goldberg, KA ^{[1
]}

Mackevich, JF ^{[1
]}

Trefonas, P ^{[1
]}

机构：

[1] Rohm & Haas Co, Marlborough, MA 01752 USA

来源：

Advances in Resist Technology and Processing XXII, Pt 1 and 2 | 2005年 / 5753卷

关键词：

EUV; photoresists; EUV-2D; MET;

D O I：

10.1117/12.600511

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The new high NA (0.3) Micro Exposure Tool at the Advanced Light Source (MET@ALS) at Lawrence Berkeley National Laboratories provides the first opportunity to evaluate the ultimate resolution capabilities of chemically amplified resists using EUV lithography. We characterized the imaging capabilities of a well-known tool-test resist (EUV-2D, XP98248B) and a new high resolution resist (IMET-1K, XP3454C). Emphasis was placed on evaluating resists for focus and exposure latitude at 50 nm dense and isolated lines. MET-1K is capable of resolving 30 nm lines and shows modulation in 25 nm dense lines. We describe some early process optimization experiments using MET-1K that show further advances in lithographic capability. Another new series of resists (MET-2A. 2B. 2C, 2D) also show great promise for good resolution, LER and sensitivity,

引用

页码：754 / 764

页数：11

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