Photoenhanced wet etching of n-gallium nitride

被引：0

作者：

Skriniarová, J ^{[1
]}

Michalka, M ^{[1
]}

Uherek, F ^{[1
]}

Kordos, P ^{[1
]}

机构：

[1] Slovak Univ Technol Bratislava, Dept Microelect, SK-81219 Bratislava, Slovakia

来源：

2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS | 2002年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoassisted electrochemical (PEC) etching of n-doped GaN layer grown on saphire in a KOH based solution under illumination of a Hg arc lamp is demonstrated Smooth surfaces were obtained for a narrow range of etching conditions. It was found that this window could be extended by using etch conditions which produced "whiskers". Subsequent post treatment in developer AZ 400K and KOH solution was used to remove these whiskers. An influence of the surface treatment of GaN by wet chemical etching prior to the Schottky barrier metal deposition was investigated.

引用

页码：56 / 59

页数：4

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