Characteristics of n+ polycrystalline-Si/Al2O3/Si metal-oxide-semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor

We report interface and dielectric reliability characteristics of n(+) polycrystalline-silicon (poly-Si)/Al2O3/Si metal-oxide-semiconductor (MOS) capacitors. Al2O3 films were prepared by atomic layer chemical vapor deposition using Al(CH3)(3) and H2O vapor. Interface state density (D-it) and dielectric reliability properties of n(+) poly-Si/Al2O3/Si MOS structures were examined by capacitance-voltage, conductance, current-voltage, and time-dependent dielectric breakdown measurements. The D-it of the n(+) poly-Si/Al2O3/Si MOS system near the Si midgap is approximately 8 x 10(10) eV(-1) cm(-2) as determined by the conductance method. Frequency dispersion as small as similar to 20 mV and hysteresis of similar to 15 mV were attained under the electric field of +/-8 MV/cm. The gate leakage current of similar to 36 A effective thickness Al2O3 dielectric measured at the gate voltage of -2.5 V is similar to -5 nA/cm(2), which is approximately three orders of magnitude lower than that of a controlled oxide (SiO2). Time-dependent dielectric breakdown data of Al2O3/Si MOS capacitors under the constant current/voltage stress reveal excellent charge-to-breakdown characteristics over controlled oxide. Reliable gate oxide integrity of Al2O3 gate dielectric is manifested by the excellent distribution of gate oxide breakdown voltage on 128 million MOS capacitors having isolation edges. Extracted time constant and capture cross section of the Al2O3/Si junction are discussed. (C) 2001 American Institute of Physics.