Generation of plasmonic hot carriers from d-bands in metallic nanoparticles

被引:14
作者
Castellanos, Lara Roman [1 ,2 ]
Kahk, Juhan Matthias [1 ]
Hess, Ortwin [2 ]
Lischner, Johannes [1 ,2 ]
机构
[1] Imperial Coll London, Dept Mat, London SW7 2AZ, England
[2] Imperial Coll London, Dept Phys, London SW7 2AZ, England
基金
英国工程与自然科学研究理事会;
关键词
APPROXIMATION; DECOMPOSITION; ELECTRONS;
D O I
10.1063/5.0003123
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present an approach to master the well-known challenge of calculating the contribution of d-bands to plasmon-induced hot carrier rates in metallic nanoparticles. We generalize the widely used spherical well model for the nanoparticle wavefunctions to flat d-bands using the envelope function technique. Using Fermi's golden rule, we calculate the generation rates of hot carriers after the decay of the plasmon due to transitions either from a d-band state to an sp-band state or from an sp-band state to another sp-band state. We apply this formalism to spherical silver nanoparticles with radii up to 20 nm and also study the dependence of hot carrier rates on the energy of the d-bands. We find that for nanoparticles with a radius less than 2.5 nm, sp-band state to sp-band state transitions dominate hot carrier production, while d-band state to sp-band state transitions give the largest contribution for larger nanoparticles.
引用
收藏
页数:6
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