Substrate temperature dependence of Si growth by an electron beam irradiation technique using a Si2H6 gas source

The kinetics of low-temperature Si growth using the electron beam irradiation technique has been studied, Si films can be grown exclusively under the electron beam irradiated area on Si substrates in a Si2H6 atmosphere. However, Si growth is strongly dependent on the substrate temperature, which reveals that growth is limited by surface reactions. Higher Si hydrides such as SiH2, SiH3 and Si2H6 are considered precursors of Si growth. (C) 1998 Elsevier Science B.V. All rights reserved.