ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

被引:26
作者
Liang, Yan-Kui [1 ]
Li, Wei-Li [1 ]
Wang, Yong-Jyun [2 ]
Peng, Li-Chi [1 ]
Lu, Chun-Chieh [3 ]
Huang, Huai-Ying [3 ]
Yeong, Sai Hooi [3 ]
Lin, Yu-Ming [3 ]
Chu, Ying-Hao [2 ]
Chang, Edward-Yi [4 ]
Lin, Chun-Hsiung [1 ]
机构
[1] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[3] Taiwan Semicond Mfg Co Ltd, Hsinchu, Taiwan
[4] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
Atomic layer deposition; ferroelectric capacitor; hafnium zirconium oxide (Hf0.5Zr0.5O2; HZO); HfO2; ZrO2; endurance; reliability; wake-up; fatigue; SWITCHING ENDURANCE; THIN-FILMS;
D O I
10.1109/LED.2022.3193383
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ferroelectric polarization stability and dielectric characteristics of ZrO2-HfO2 superlattice (SL) ferroelectric layer Metal-Ferroelectric-Metal (MFM) capacitor fabricated with various post-metal annealing (PMA) temperatures were presented. It was demonstrated that ZrO2-HfO2 SL MFM capacitors with increased post metallization PMA temperature (i.e., 600 degrees C) showed improved polarization stability with almostwake- up free and polarization fatigue free characteristics. In this work, we have shown that highly stable remanent polarization (2P(r)@ 3MV/cm) of similar to 30 mu C/cm(2) with small variation (Delta 2P(r) <= 2 mu C/cm(2); Delta 2P(r) / 2P(r), pristine <= 9 %) up to 1011 cycles of field cycling were exhibited by the atomic layer deposition (ALD) deposited ZrO2-HfO2 superlattice with 600 inverted perpendicular C PMA. To our knowledge, the nearly "wake- up"- free and fatigue-free polarization behavior up to 10(11) cycles are among the best polarization stability for the hafnium zirconium oxide based MFM capacitors sustained endurance tests for more than 10(10) cycles.
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页码:1451 / 1454
页数:4
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