ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

被引:32
作者
Liang, Yan-Kui [1 ]
Li, Wei-Li [1 ]
Wang, Yong-Jyun [2 ]
Peng, Li-Chi [1 ]
Lu, Chun-Chieh [3 ]
Huang, Huai-Ying [3 ]
Yeong, Sai Hooi [3 ]
Lin, Yu-Ming [3 ]
Chu, Ying-Hao [2 ]
Chang, Edward-Yi [4 ]
Lin, Chun-Hsiung [1 ]
机构
[1] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[3] Taiwan Semicond Mfg Co Ltd, Hsinchu, Taiwan
[4] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
Atomic layer deposition; ferroelectric capacitor; hafnium zirconium oxide (Hf0.5Zr0.5O2; HZO); HfO2; ZrO2; endurance; reliability; wake-up; fatigue; SWITCHING ENDURANCE; THIN-FILMS;
D O I
10.1109/LED.2022.3193383
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ferroelectric polarization stability and dielectric characteristics of ZrO2-HfO2 superlattice (SL) ferroelectric layer Metal-Ferroelectric-Metal (MFM) capacitor fabricated with various post-metal annealing (PMA) temperatures were presented. It was demonstrated that ZrO2-HfO2 SL MFM capacitors with increased post metallization PMA temperature (i.e., 600 degrees C) showed improved polarization stability with almostwake- up free and polarization fatigue free characteristics. In this work, we have shown that highly stable remanent polarization (2P(r)@ 3MV/cm) of similar to 30 mu C/cm(2) with small variation (Delta 2P(r) <= 2 mu C/cm(2); Delta 2P(r) / 2P(r), pristine <= 9 %) up to 1011 cycles of field cycling were exhibited by the atomic layer deposition (ALD) deposited ZrO2-HfO2 superlattice with 600 inverted perpendicular C PMA. To our knowledge, the nearly "wake- up"- free and fatigue-free polarization behavior up to 10(11) cycles are among the best polarization stability for the hafnium zirconium oxide based MFM capacitors sustained endurance tests for more than 10(10) cycles.
引用
收藏
页码:1451 / 1454
页数:4
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