Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor

被引：33

作者：

Kao, Ming-Yen ^{[1
]}

Sachid, Angada B. ^{[1
]}

Lin, Yen-Kai ^{[1
]}

Liao, Yu-Hung ^{[1
]}

Agarwal, Harshit ^{[1
]}

Kushwaha, Pragya ^{[1
]}

Duarte, Juan Pablo ^{[1
]}

Chang, Huan-Lin ^{[1
]}

Salahuddin, Sayeef ^{[1
]}

Hu, Chenming ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 10期

关键词：

Dielectric (DE); ferroelectric (FE); Landau equation; negative capacitance field-effect transistor (NCFET); polarization-electric field (P-E) loop; Sentaurus; TCAD;

D O I：

10.1109/TED.2018.2864971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a new scheme to consider the dielectric (DE) phases inside polycrystalline ferroelectric (FE) materials. The scheme is used to extract material parameters from experimental polarization-electric field (P-E) measurements from the literature. A Sentaurus TCAD structure is constructed with the extracted parameters, and the simulated P-E curve is in a good agreement with the experimental data. Furthermore, variation of the device performance in a negative capacitance field-effect transistor (NCFET) due to the spatial distribution of DE and FE phases is studied using Sentaurus TCAD. It is found that the resultant variations of on and off currents can be up to 14.44% and 30.23%, respectively, thus showing the impact of inhomogeneous crystalline phases of the FE material on device performance.

引用

页码：4652 / 4658

页数：7

共 25 条

[1] Engineering Negative Differential Resistance in NCFETs for Analog Applications [J].

Agarwal, Harshit ;

Kushwaha, Pragya ;

Duarte, Juan Pablo ;

Lin, Yen-Kai ;

Sachid, Angada B. ;

Kao, Ming-Yen ;

Chang, Huan-Lin ;

Salahuddin, Sayeef ;

Hu, Chenming .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (05) :2033-2039

[2]

[Anonymous], 2015, DEVICE RES C CONF DI, DOI DOI 10.1109/DRC.2015.7175542

[3]

[Anonymous], IEDM

[4]

[Anonymous], 2017, SENT DEV

[5]

[Anonymous], 2017 IEEE INT EL DEV, DOI DOI 10.1109/IEDM.2017.8268425

[6]

[Anonymous], IEDM

[7]

[Anonymous], INT EL DEVICES MEET

[8]

[Anonymous], P 5 INT S NEXT GEN E

[9] Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs [J].

Dasgupta, S. ;

Rajashekhar, A. ;

Majumdar, K. ;

Agrawal, N. ;

Razavieh, A. ;

Trolier-Mckinstry, S. ;

Datta, S. .

IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS, 2015, 1 :43-48

[10]

Duarte J.P., 2016, Electron Devices Meeting (IEDM), 2016 IEEE International, P754, DOI DOI 10.1109/IEDM.2016.7838514

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