Energy-filtered transmission electron microscopy of multilayers in semiconductors

被引：1

作者：

Liu, CP ^{[1
]}

Boothroyd, CB ^{[1
]}

Humphreys, CJ ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES | 1998年 / 523卷

关键词：

D O I：

10.1557/PROC-523-159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Knowledge about compositional profiles on an atomic scale is important for semiconductor multilayers. In this paper, we attempt to quantify the Ti atomic fraction in a TixAl1-xN multilayer and the total As concentrations in As delta-doped layers using energy-filtered imaging. These two materials represent materials where the characteristic energy loss edges are located in widely different energy losses with the L edge of Ti being above 450eV and that of As around 1350eV. The accuracy of the Ti atomic fraction in TixAl1-xN is found to be around 10at% for specimens of uniform thickness made by focused ion beam milling, whereas the resolution and As concentration for the As containing delta-layer is found to be dominated by the signal to noise ratio.

引用

页码：159 / 164

页数：6