CRYSTALLINE AgInSe2 FILMS ON GLASS BY LASER ABLATION

Laser ablation has attracted special interest for the formation of thin films compared with other formation technique. A distinctive feature of laser ablation is that it allows high quality and stoichiometry of films of even very complex element material. In this presentation, laser ablation of AgInSe2 chalcopyrite semiconductor will be discussed in which it is difficult to maintain stoichiometry by conventional method. High Quality AgInSe2 (AIS) films were grown on Glass substrates by the ultra-high-vacuum pulsed laser deposition technique from the AIS target synthesized from high-purity materials. The X-ray diffraction studies of the films show that films are textured in (112) direct ion. The substrate temperature appears to influence the properties of films. Increase in substrate temperature results in a more ordered structure. Compositional analysis has been carried out by EDAX. It is observed that compositional stoichiometry is maintained to a greater extent by PLD technique than other traditional methods like thermal evaporation. The optical studies of the films show that the optical band gap is about 1.20 eV.