Nanopeapods by Galvanic Displacement Reaction

被引:33
作者
Hangarter, Carlos M. [2 ]
Lee, Young-In [1 ]
Hernandez, Sandra C. [2 ]
Choa, Yong-ho [1 ]
Myung, Nosang V. [2 ]
机构
[1] Hanyang Univ, Dept Fine Chem Engn, Ansan 426791, South Korea
[2] Univ Calif Riverside, Dept Chem & Environm Engn, Riverside, CA 92521 USA
关键词
electrochemistry; gold; nanostructures; nanotubes; tellurium; NANOPARTICLE CHAINS; METAL NANOSTRUCTURES; NANOWIRES; NANOTUBES; ARCHITECTURE; TRANSPORT;
D O I
10.1002/anie.201001559
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Like peas in a pod: Galvanic displacement of electrodeposited multisegmented nanowires was used to synthesize nanopeapod structures at room temperature (see scheme). Depending on the redox potential of the displacement process, a variety of nanopeapod materials could be prepared, e.g., semiconductor/metal, p-type/n-type, metal/metal, ferromagnetic/nonmagnetic materials. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
引用
收藏
页码:7081 / 7085
页数:5
相关论文
共 37 条
[1]   NANOWIRES FORMED IN ANODIC OXIDE NANOTEMPLATES [J].
ALMAWLAWI, D ;
LIU, CZ ;
MOSKOVITS, M .
JOURNAL OF MATERIALS RESEARCH, 1994, 9 (04) :1014-1018
[2]  
[Anonymous], 2001, ELECTROCHEMICAL METH
[3]  
Baba MS, 1996, RAPID COMMUN MASS SP, V10, P691, DOI 10.1002/(SICI)1097-0231(199604)10:6<691::AID-RCM519>3.3.CO
[4]  
2-0
[5]  
Bunshah RointanF., 1982, DEPOSITION TECHNOLOG
[6]   Bi and Te thin films synthesized by galvanic displacement from acidic nitric baths [J].
Chang, Chong Hyun ;
Rheem, Youngwoo ;
Choa, Yong-Ho ;
Shin, Dong Hyuk ;
Park, Deok-Yong ;
Myung, Nosang V. .
ELECTROCHIMICA ACTA, 2010, 55 (03) :743-752
[7]   Copper deposition onto silicon by galvanic displacement: Effect of silicon dissolution rate [J].
daRosa, Calvin P. ;
Maboudian, Roya ;
Iglesia, Enrique .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (06) :E70-E78
[8]   New directions for low-dimensional thermoelectric materials [J].
Dresselhaus, Mildred S. ;
Chen, Gang ;
Tang, Ming Y. ;
Yang, Ronggui ;
Lee, Hohyun ;
Wang, Dezhi ;
Ren, Zhifeng ;
Fleurial, Jean-Pierre ;
Gogna, Pawan .
ADVANCED MATERIALS, 2007, 19 (08) :1043-1053
[9]  
Gates B, 2002, ADV FUNCT MATER, V12, P679, DOI 10.1002/1616-3028(20021016)12:10<679::AID-ADFM679>3.0.CO
[10]  
2-#