Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene

被引:17
作者
Joucken, Frederic [1 ,8 ]
Bena, Cristina [2 ]
Ge, Zhehao [1 ]
Quezada-Lopez, Eberth [1 ]
Pinon, Sarah [2 ]
Kaladzhyan, Vardan [3 ]
Taniguchi, Takashi [4 ]
Watanabe, Kenji [5 ]
Ferreira, Aires [6 ,7 ]
Velasco, Jairo J. R. [1 ]
机构
[1] Univ Calif Santa Cruz, Dept Phys, Santa Cruz, CA 95064 USA
[2] Univ Paris Saclay, Inst Phys Theor, CEA CNRS, F-91190 Gif Sur Yvette, France
[3] Univ Basel, Dept Phys, CH-4056 Basel, Switzerland
[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan
[5] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan
[6] Univ York, Dept Phys, York Y010 5DD, N Yorkshire, England
[7] Univ York, York Ctr Quantum Technol, York Y010 5DD, N Yorkshire, England
[8] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
基金
美国国家科学基金会;
关键词
Bilayer graphene; graphite; scanning tunneling microscopy; quasiparticle interference; dopant; BALLISTIC TRANSPORT; SUPERCONDUCTIVITY; INTERFERENCE; MANIPULATION; SCATTERING; SYMMETRY; DRIVEN; STM;
D O I
10.1021/acs.nanolett.1c01442
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Graphite crystals used to prepare graphene-based heterostructures are generally assumed to be defect free. We report here scanning tunneling microscopy results that show graphite commonly used to prepare graphene devices can contain a significant amount of native defects. Extensive scanning of the surface allows us to determine the concentration of native defects to be 6.6 x 10(8) cm(-2). We further study the effects of these native defects on the electronic properties of Bernal-stacked bilayer graphene. We observe gate-dependent intravalley scattering and successfully compare our experimental results to T-matrix-based calculations, revealing a clear carrier density dependence in the distribution of the scattering vectors. We also present a technique for evaluating the spatial distribution of short-scale scattering. Finally, we present a theoretical analysis based on the Boltzmann transport equation that predicts that the dilute native defects identified in our study are an important extrinsic source of scattering, ultimately setting the charge carrier mobility at low temperatures.
引用
收藏
页码:7100 / 7108
页数:9
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