Latchup-free ESD protection design with complementary substrate-triggered SCR devices

被引：38

作者：

Ker, MD ^{[1
]}

Hsu, KC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Nanoelect & Gigascale Syst Lab, Inst Elect, Hsinchu 300, Taiwan

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2003年 / 38卷 / 08期

关键词：

complementary; electrostatic discharge (ESD); ESD protection circuit; silicon-controlled rectifier (SCR); substrate-triggered technique;

D O I：

10.1109/JSSC.2003.814434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) protection circuits which are combined with the substrate-triggered technique and an SCR device, are proposed. A complementary circuit style with the substrate-triggered SCR device is designed to discharge both the pad-to-V-SS and pad-to-V-DD ESD stresses. The novel complementary substrate-triggered SCR devices have the advantages of controllable switching voltage, adjustable holding voltage, faster turn-on speed, and compatible to general CMOS process without extra process modification such as the silicide-blocking mask and ESD implantation. The total holding voltage of the substrate-triggered SCR device can be linearly increased by adding the stacked diode string to avoid the transient-induced latchup issue in the ESD protection circuits. The on-chip ESD protection circuits designed with the proposed complementary substrate-triggered SCR devices and stacked diode string for the input/output pad and power pad have been successfully verified in a 0.25-mum salicided CMOS process with the human body model (machine model) ESD level of similar to7.25 kV (500 V) in a small layout area.

引用

页码：1380 / 1392

页数：13

共 25 条

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