Defect absorption and optical transitions in hydrogenated amorphous silicon

被引：13

作者：

Thevaril, Jasmin J. ^{[2
]}

O'Leary, Stephen K. ^{[1
]}

机构：

[1] Univ British Columbia Okanagan, Sch Engn, Kelowna, BC V1V 1V7, Canada

[2] Univ Windsor, Dept Elect & Comp Engn, Windsor, ON N9B 3P4, Canada

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 37-38期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Semiconductors; Hydrogenated amorphous silicon; Optical response; Defect states; DENSITY-OF-STATES; MOLECULAR-BEAM EPITAXY; A-SI-H; ELECTRONIC STATES; MATRIX-ELEMENT; ANALYTIC MODEL; SEMICONDUCTORS; DISTRIBUTIONS; TRANSISTORS; DEPENDENCE;

D O I：

10.1016/j.ssc.2010.06.034

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using an empirical model for the density of states functions associated with hydrogenated amorphous silicon, with defect states taken into account, we examine how the distributions of such states shape the optical response of this material. The contributions to this response attributable to the various types of optical transitions are also determined. Finally, we demonstrate that we are able to capture the spectral dependence of the optical absorption coefficient associated with a defect absorption influenced sample of hydrogenated amorphous silicon using our empirical formalism for the density of states functions associated with this material. (C) 2010 Published by Elsevier Ltd

引用

页码：1851 / 1855

页数：5

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