Defect absorption and optical transitions in hydrogenated amorphous silicon

被引：13

作者：

Thevaril, Jasmin J. ^{[2
]}

O'Leary, Stephen K. ^{[1
]}

机构：

[1] Univ British Columbia Okanagan, Sch Engn, Kelowna, BC V1V 1V7, Canada

[2] Univ Windsor, Dept Elect & Comp Engn, Windsor, ON N9B 3P4, Canada

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 37-38期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Semiconductors; Hydrogenated amorphous silicon; Optical response; Defect states; DENSITY-OF-STATES; MOLECULAR-BEAM EPITAXY; A-SI-H; ELECTRONIC STATES; MATRIX-ELEMENT; ANALYTIC MODEL; SEMICONDUCTORS; DISTRIBUTIONS; TRANSISTORS; DEPENDENCE;

D O I：

10.1016/j.ssc.2010.06.034

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using an empirical model for the density of states functions associated with hydrogenated amorphous silicon, with defect states taken into account, we examine how the distributions of such states shape the optical response of this material. The contributions to this response attributable to the various types of optical transitions are also determined. Finally, we demonstrate that we are able to capture the spectral dependence of the optical absorption coefficient associated with a defect absorption influenced sample of hydrogenated amorphous silicon using our empirical formalism for the density of states functions associated with this material. (C) 2010 Published by Elsevier Ltd

引用

页码：1851 / 1855

页数：5

共 35 条

[1] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS
BRODSKY, MH
TITLE, RS
WEISER, K
PETTIT, GD
[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &
[2] GENERALIZED-MODEL FOR THE OPTICAL-ABSORPTION EDGE IN A-SI-H
DATTA, T
WOOLLAM, JA
[J]. PHYSICAL REVIEW B, 1989, 39 (03): : 1953 - 1954
[3] Disorder and the optical properties of amorphous silicon grown by molecular beam epitaxy
Fogal, BJ
O'Leary, SK
Lockwood, DJ
Baribeau, JM
Noël, M
Zwinkels, JC
[J]. SOLID STATE COMMUNICATIONS, 2001, 120 (11) : 429 - 434
[4] OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI
FREEMAN, EC
PAUL, W
[J]. PHYSICAL REVIEW B, 1979, 20 (02): : 716 - 728
[5] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON
JACKSON, WB
KELSO, SM
TSAI, CC
ALLEN, JW
OH, SJ
[J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5187 - 5198
[6] An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements
Jiao, L
Chen, I
Collins, RW
Wronski, CR
Hata, N
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (09) : 1057 - 1059
[7] DETERMINATION OF THE OPTICAL BANDGAP OF AMORPHOUS-SILICON
KLAZES, RH
VANDENBROEK, MHLM
BEZEMER, J
RADELAAR, S
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (04): : 377 - 383
[8] Optical absorption in an amorphous silicon superlattice grown by molecular beam epitaxy
Lockwood, DJ
Baribeau, JM
Noël, M
Zwinkels, JC
Fogal, BJ
O'Leary, SK
[J]. SOLID STATE COMMUNICATIONS, 2002, 122 (05) : 271 - 275
[9] Dielectric function of hydrogenated amorphous silicon near the optical absorption edge
Malainho, E.
Vasilevskiy, M. I.
Alpuim, P.
Filonovich, S. A.
[J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)
[10] An analysis of the distributions of electronic states associated with hydrogenated amorphous silicon
Malik, SM
O'Leary, SK
[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2005, 16 (03) : 177 - 181

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