A Memristor-Based Cell for Complexity

被引:0
|
作者
Buscarino, Arturo [1 ]
Corradino, Claudia [1 ]
Fortuna, Luigi [1 ]
Frasca, Mattia [1 ]
Viet-Thanh Pham [2 ]
机构
[1] Univ Catania, Dipartimento Ingn Elettr Elettron & Informat, Viale A Doria 6, I-95125 Catania, Italy
[2] Hanoi Univ Sci & Technol, Sch Elect & Telecommun, 01 Dai Co Viet, Hanoi, Vietnam
关键词
TURING PATTERNS; LOGIC OPERATIONS; CIRCUITS; DESIGN; CNNS;
D O I
10.1007/978-3-319-71048-8_8
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
The theoretical importance of memristor goes much beyond the field, i.e., circuit theory, in which its discovery originated. In fact, neuroscience and nonlinear science in general are also interested as memristors have been found to be adequate model of both synapses and Hodgkin-Huxley axons. In this work, we discuss the use of memristors as the unique nonlinear element of the cell of a cellular architecture reproducing several phenomena of interest for nonlinear science such as autowave propagation and Turing pattern formation. We illustrate the model and present numerical simulations showing how the same cell structure can account for these different dynamical behaviors when its parameters are varied.
引用
收藏
页码:133 / 141
页数:9
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