MOCVD of crystalline Bi2O3 thin films using a single-source bismuth alkoxide precursor and their use in photodegradation of water

被引:57
作者
Moniz, Savio J. A. [1 ]
Blackman, Christopher S. [1 ]
Carmalt, Claire J. [1 ]
Hyett, Geoffrey [1 ]
机构
[1] UCL, Dept Chem, Mat Chem Ctr, London WC1H 0AJ, England
基金
英国工程与自然科学研究理事会;
关键词
CHEMICAL-VAPOR-DEPOSITION; INDUCED HYDROGEN-PRODUCTION; TRANSPORT-PROPERTIES; MOLECULAR-STRUCTURE; RAMAN-SPECTROSCOPY; OPTICAL-PROPERTIES; OXIDE-FILMS; SILLENITES; GROWTH; PT/BI2O3/RUO2;
D O I
10.1039/c0jm01720e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Bismuth(III) tert-butoxide [Bi((OBu)-Bu-t)(3)] was utilised as a single-source precursor to controllably deposit thin films of different phases of bismuth oxide (Bi2O3) on glass substrates via low-pressure chemical vapour deposition (LPCVD). Band gaps for the different phases have been measured (E-g = 2.3-3.0 eV) and the films displayed excellent photodegradation of water under near-UV irradiation.
引用
收藏
页码:7881 / 7886
页数:6
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