Wideband Matched CMOS LNA Design Using R-L-C Loading Network

被引：0

作者：

Wu, Hui-I ^{[1
]}

Horng, Qi-Yuan ^{[1
]}

Hu, Robert ^{[2
]}

Jou, Christina F. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Commun Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES | 2010年 / 31卷 / 09期

关键词：

Wideband; Input matching; Low noise amplifier; LNA; LOW-NOISE AMPLIFIER; POWER;

D O I：

10.1007/s10762-010-9664-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a new methodology for designing and analyzing wideband matched CMOS LNA with R-L-C loading network, where validity of this new approach is supported by the agreement between the simulated input impedance of the LNA and its calculated counterpart. To demonstrate its feasibility, two wideband matched LNA's are designed using TSMC 0.18-mu m RF-CMOS process. One is for 3-8 GHz application and the second one targets at 8-25 GHz frequency range. The measured results of both circuits will then be presented.

引用

页码：1063 / 1074

页数：12

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