Indium Phosphide Membrane Nanophotonic Integrated Circuits on Silicon

被引：43

作者：

Jiao, Yuqing ^{[1
]}

van der Tol, Jos ^{[1
]}

Pogoretskii, Vadim ^{[1
]}

van Engelen, Jorn ^{[1
]}

Kashi, Amir Abbas ^{[1
]}

Reniers, Sander ^{[1
]}

Wang, Yi ^{[1
]}

Zhao, Xinran ^{[1
]}

Yao, Weiming ^{[2
]}

Liu, Tianran ^{[1
]}

Pagliano, Francesco ^{[1
,3
]}

Fiore, Andrea ^{[1
]}

Zhang, Xuebing ^{[1
]}

Cao, Zizheng ^{[1
]}

Kumar, Rakesh Ranjan ^{[4
]}

Tsang, Hon Ki ^{[4
]}

van Veldhoven, Rene ^{[5
]}

de Vries, Tjibbe ^{[5
]}

Geluk, Erik-Jan ^{[5
]}

Bolk, Jeroen ^{[1
]}

Ambrosius, Huub ^{[1
,5
]}

Smit, Meint ^{[1
]}

Williams, Kevin ^{[1
]}

机构：

[1] Eindhoven Univ Technol, IPI, POB 513, NL-5600 MB Eindhoven, Netherlands

[2] PITC, POB 513, NL-5600 MB Eindhoven, Netherlands

[3] NanoPHAB, Groene Loper 19,POB 513, NL-5612 AP Eindhoven, Netherlands

[4] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China

[5] Eindhoven Univ Technol, Nanolab TU E, POB 513, NL-5600 MB Eindhoven, Netherlands

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2020年 / 217卷 / 03期

关键词：

indium phosphide; membranes; nanophotonics; photonic integration; photonic integrated circuits; semiconductor laser; waveguides; FREE-CARRIER LIFETIME; LASER; THRESHOLD; 2-PHOTON; PATH;

D O I：

10.1002/pssa.201900606

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photonic integration in a micrometer-thick indium phosphide (InP) membrane on silicon (IMOS) offers intrinsic and high-performance optoelectronic functions together with high-index-contrast nanophotonic circuitries. Recently demonstrated devices have shown competitive performances, including high side-mode-suppression ratio (SMSR) lasers, ultrafast photodiodes, and significant improvement in critical dimensions. Applications of the IMOS devices and circuits in optical wireless, quantum photonics, and optical cross-connects have proven their performances and high potential.

引用

页数：12

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