Thermodynamic constraints and substrate influences on the growth of high-quality Bi2Te3 thin films by pulsed laser deposition

被引：2

作者：

Tanaka, Yusuke ^{[1
]}

Krockenberger, Yoshiharu ^{[1
]}

Kunihashi, Yoji ^{[1
]}

Sanada, Haruki ^{[1
]}

Omi, Hiroo ^{[1
,2
]}

Gotoh, Hideki ^{[1
,3
]}

Oguri, Katsuya ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan

[2] Yamato Univ, 2-5-1 Katayama Cho, Suita, Osaka 5640082, Japan

[3] Hiroshima Univ, Res Inst Nanodevices, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 7398527, Japan

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 06期

关键词：

topological insulator; pulsed laser deposition; thin film; thermoelectric material; van der Waals material; TOPOLOGICAL INSULATOR BI2TE3; STATISTICAL RATE THEORY; EMISSIVITY; TELLURIUM; BISMUTH;

D O I：

10.35848/1882-0786/ac6e27

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the growth of Bi2Te3 thin films on (111) CaF2 and (111) BaF2 substrates by pulsed laser deposition. Stoichiometric Bi2Te3 thin films were grown using targets with excess tellurium. We adopted a combinatorial temperature variation principle, where the growth temperature is monotonically varied during the growth. This growth method is supportive to effectively minimize Te loss in the Bi2Te3 films. We found large differences in growth conditions between Bi2Te3 thin films on the CaF2 and BaF2 substrates. The lattice matched (111) BaF2 substrate is preferred to grow Bi2Te3 for the further development of topological electronics.

引用

页数：5

共 33 条

[1] Total hemispherical emissivity of sintered SiC up to 1850 K in high vacuum and in air at different pressures [J].

Balat-Pichelin, M. ;

Bousquet, A. .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2018, 38 (10) :3447-3456

[2] THE VAPOR PRESSURES OF TELLURIUM AND SELENIUM [J].

BROOKS, LS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1952, 74 (01) :227-229

[3] Temperature-resolved infrared spectral emissivity of SiC and Pt-10Rh for temperatures up to 900°C [J].

Cagran, Claus P. ;

Hanssen, Leonard M. ;

Noorma, Mart ;

Gura, Alex V. ;

Mekhontsev, Sergey N. .

INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2007, 28 (02) :581-597

[4] Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator [J].

Chang, Cui-Zu ;

Zhang, Jinsong ;

Feng, Xiao ;

Shen, Jie ;

Zhang, Zuocheng ;

Guo, Minghua ;

Li, Kang ;

Ou, Yunbo ;

Wei, Pang ;

Wang, Li-Li ;

Ji, Zhong-Qing ;

Feng, Yang ;

Ji, Shuaihua ;

Chen, Xi ;

Jia, Jinfeng ;

Dai, Xi ;

Fang, Zhong ;

Zhang, Shou-Cheng ;

He, Ke ;

Wang, Yayu ;

Lu, Li ;

Ma, Xu-Cun ;

Xue, Qi-Kun .

SCIENCE, 2013, 340 (6129) :167-170

[5] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[6] Pulsed laser deposition of Bi2Te3 thin films [J].

Dauscher, A ;

Thomy, A ;

Scherrer, H .

THIN SOLID FILMS, 1996, 280 (1-2) :61-66

[7] A statistical rate theory study of interface concentration during crystal growth or dissolution [J].

Dejmek, M ;

Ward, CA .

JOURNAL OF CHEMICAL PHYSICS, 1998, 108 (20) :8698-8704

[8] The vapour pressure of tellurium. [J].

Doolan, JJ ;

Partington, JR .

TRANSACTIONS OF THE FARADAY SOCIETY, 1924, 20 (02) :0342-0344

[9] A STUDY OF THE PHASES IN THE BISMUTH - TELLURIUM SYSTEM [J].

FEUTELAIS, Y ;

LEGENDRE, B ;

RODIER, N ;

AGAFONOV, V .

MATERIALS RESEARCH BULLETIN, 1993, 28 (06) :591-596

[10] Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films [J].

Fornari, C., I ;

Rappl, P. H. O. ;

Morelhao, S. L. ;

Fornari, G. ;

Travelho, J. S. ;

de Castro, S. ;

Pirralho, M. J. P. ;

Pena, F. S. ;

Peres, M. L. ;

Abramof, E. .

MATERIALS RESEARCH EXPRESS, 2018, 5 (11)

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