Strained SiCMOS (SS CMOS) technology: opportunities and challenges

被引：81

作者：

Rim, K ^{[1
]}

Anderson, R

Boyd, D

Cardone, F

Chan, K

Chen, H

Christansen, S

Chu, J

Jenkins, K

Kanarsky, T

Koester, S

Lee, BH

Lee, K

Mazzeo, V

Mocuta, A

Mocuta, D

Mooney, PM

Oldiges, P

Ott, J

Ronsheim, P

Roy, R

Steegen, A

Yang, M

Zhu, H

Ieong, M

Wong, HSP

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Microelect SRDC, Hopewell Jct, NY 12433 USA

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 07期

关键词：

D O I：

10.1016/S0038-1101(03)00041-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strain-induced enhancement of current drive is a promising way to extend the advancement of CMOS performance. Fabrication of strained Si MOSFET has been demonstrated with key elements of modern day's CMOS technology. Significant mobility and current drive enhancements were observed. Recent advancements in the SS devices are summarized, and the challenges in device physics/design issues as well as in materials/process integration are highlighted. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：1133 / 1139

页数：7

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