Enhancement of thermoelectric performance of In doped Bi2Te2.7Se0.3 compounds

被引：20

作者：

Hegde, Ganesh Shridhar ^{[1
]}

Prabhu, A. N. ^{[1
]}

Rao, Ashok ^{[1
]}

Babu, P. D. ^{[2
]}

机构：

[1] Manipal Acad Higher Educ, Dept Phys, Manipal Inst Technol, Manipal 576104, India

[2] Bhabha Atom Res Ctr, UGC DAE Consortium Sci Res, Mumbai Ctr, R-5 Shed, Mumbai 400085, Maharashtra, India

来源：

PHYSICA B-CONDENSED MATTER | 2020年 / 584卷 / 584期

关键词：

Chalcogenides; Semiconductivity; X-ray diffraction; Thermal conductivity; Thermoelectrics; TRANSPORT-PROPERTIES; ELECTRICAL-PROPERTIES; THERMAL-CONDUCTIVITY; TELLURIDE; POWER; TRANSITION; LAYERS;

D O I：

10.1016/j.physb.2020.412087

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Bulk samples of (Bi1-xInx)(2) Te2.7Se0.3 (x = 0.00, 0.02, 0.04) were prepared by solid state reaction technique. Powder X-ray diffraction pattern confirms that the polycrystalline samples have hexagonal structure with spacegroup R (3) over barm. Surface morphology shows a reduction in porous behaviour of the material due to co-doping. Energy dispersive X ray analysis demonstrates the elements present in the sample. Electrical resistivity has shown a quasi-degenerate semiconducting behaviour. Hall effect and Seebeck coefficient confirmed that all the samples are n-type. There is a decrease in thermal conductivity with the variation in dopant concentration. The maximum ZT was found to be 0.6 at 350 K for the sample (Bi0.98In0.02)(2) Te2.7Se0.3 which is about 5 times that of the pristine sample Bi2Te3.

引用

页数：10

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