Atomic layer deposition of hafnium oxide thin films from tetrakis(dimethylamino)hafnium (TDMAH) and ozone

被引：0

作者：

Liu, XY ^{[1
]}

Ramanathan, S ^{[1
]}

Seidel, TE ^{[1
]}

机构：

[1] Genus Inc, Sunnyvale, CA 94089 USA

来源：

COMOS FRONT-END MATERIALS AND PROCESS TECHNOLOGY | 2003年 / 765卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hafnium oxide (HfO2) thin films were synthesized from tetrakis(dimethylamino) hafnium (TDMAH) and ozone (O-3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However 03 showed better saturation behavior for O-3 exposure. Yet, 100% step coverage was achieved for similar to100nm trenches with aspect ratio of 35. Temperature dependence of the deposition rate was studied at susceptor temperature from 160 degreesC to 420 degreesC. The lowest deposition rate was observed at 320 degreesC. Mercury probe measurements indicated the dielectric constant increased from 16 to 20 as susceptor temperature increased from 200 degreesC to 320 degreesC. Selected comparisons with tetrakis (ethylmethylamino) hafnium (TEMAH) were also made.

引用

页码：97 / 102

页数：6

共 9 条

[1]

GUTSCHE M, 2001, INT EL DEV M

[2] Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors [J].