Evaluation of Thermal Stability of Spin-Transfer Torque based Magnoresistive Random-Access Memory for Cache Applications in Advanced Technology Nodes

被引：0
|
作者：
Dixit, H. [1 ]
Agarwal, S. [1 ]
Datta, D. [1 ]
Jacob, A. [2 ]
Shum, D. [3 ]
Benistant, F. [3 ]
机构：
[1] Globalfoundries Engn Pvt Ltd, Bangalore, Karnataka, India
[2] Globalfoundries, Malta, NY, Malta
[3] Globalfoundries Singapore Pte Ltd, Singapore, Singapore
来源：
2018 IEEE INTERNATIONAL MAGNETIC CONFERENCE (INTERMAG) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：1
相关论文
共 50 条
  • [1] Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory
    Diao, Zhitao
    Li, Zhanjie
    Wang, Shengyuang
    Ding, Yunfei
    Panchula, Alex
    Chen, Eugene
    Wang, Lien-Chang
    Huai, Yiming
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (16)
  • [2] Electrical Manipulation of Antiferromagnetic Random-Access Memory Device by the Interplay of Spin-Orbit Torque and Spin-Transfer Torque
    Du, Ao
    Zhu, Daoqian
    Peng, Zhiyang
    Guo, Zongxia
    Wang, Min
    Shi, Kewen
    Cao, Kaihua
    Zhao, Chao
    Zhao, Weisheng
    ADVANCED ELECTRONIC MATERIALS, 2024, 10 (06)
  • [3] Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory
    Hu, Guohan
    Nowak, Anusz J.
    Gottwald, Atthias G.
    Sun, Jonathan Z.
    Houssameddine, Dimitri
    Bak, Junghoon
    Brown, Stephen L.
    Hashem, Pouya
    He, Qing
    Kim, Juhyun
    Kothandaraman, Chandrasekharan
    Lauer, Gen
    Lee, Hyun Koo
    Suwannasiri, Thitima
    Trouilloud, Philip L.
    Worledge, Daniel C.
    IEEE MAGNETICS LETTERS, 2019, 10
  • [4] Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)
    Ando, K.
    Fujita, S.
    Ito, J.
    Yuasa, S.
    Suzuki, Y.
    Nakatani, Y.
    Miyazaki, T.
    Yoda, H.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)
  • [5] Impact of Spin-Transfer Torque on the Write-Error Rate of a Voltage-Torque-Based Magnetoresistive Random-Access Memory
    Imamura, Hiroshi
    Matsumoto, Rie
    PHYSICAL REVIEW APPLIED, 2019, 11 (06)
  • [6] Performance Prospects of Deeply Scaled Spin-Transfer Torque Magnetic Random-Access Memory for In-Memory Computing
    Shi, Yuhan
    Oh, Sangheon
    Huang, Zhisheng
    Lu, Xiao
    Kang, Seung H.
    Kuzum, Duygu
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (07) : 1126 - 1129
  • [7] Spin-transfer torque magnetoresistive random access memory technology status and future directions
    Daniel C. Worledge
    Guohan Hu
    Nature Reviews Electrical Engineering, 2024, 1 (11): : 730 - 747
  • [8] Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
    Nowak, Janusz J.
    Robertazzi, Ray P.
    Sun, Jonathan Z.
    Hu, Guohan
    Park, Jeong-Heon
    Lee, JungHyuk
    Annunziata, Anthony J.
    Lauer, Gen P.
    Kothandaraman, Raman
    O'Sullivan, Eugene J.
    Trouilloud, Philip L.
    Kim, Younghyun
    Worledge, Daniel C.
    IEEE MAGNETICS LETTERS, 2016, 7
  • [9] Advances and Future Prospects of Spin-Transfer Torque Random Access Memory
    Chen, E.
    Apalkov, D.
    Diao, Z.
    Driskill-Smith, A.
    Druist, D.
    Lottis, D.
    Nikitin, V.
    Tang, X.
    Watts, S.
    Wang, S.
    Wolf, S. A.
    Ghosh, A. W.
    Lu, J. W.
    Poon, S. J.
    Stan, M.
    Butler, W. H.
    Gupta, S.
    Mewes, C. K. A.
    Mewes, Tim
    Visscher, P. B.
    IEEE TRANSACTIONS ON MAGNETICS, 2010, 46 (06) : 1873 - 1878
  • [10] Calculation of energy-barrier lowering by incoherent switching in spin-transfer torque magnetoresistive random-access memory
    Munira, Kamaram
    Visscher, P. B.
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (17)
12345