Design and characterization of 2.5kV 4H-SiC JBS rectifiers with self-aligned guard ring termination

被引：3
|
作者：
Sheridan, DC
Merrett, JN
Cressler, JD
Saddow, SE
Williams, JR
Ellis, CE
Niu, G
机构：
[1] Auburn Univ, Dept Elect & Comp Engn, Alabama Microelect Sci & Technol Ctr, Auburn, AL 36849 USA
[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
[3] Mississippi State Univ, Emerging Mat Res Lab, Mississippi State, MS 39762 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
edge termination; guard ring; Junction Barrier Schottky (JBS); Schottky diodes; simulation;
D O I：
10.4028/www.scientific.net/MSF.353-356.687
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
4H-SiC JBS rectifiers were designed with multiple floating guard ring termination using numerical simulation methods, and were fabricated using a simplified self-aligned process sequence. Simulations were used to investigate forward voltage drop and reverse electric field shielding with respect to JBS spacing. Optimized devices were fabricated on 30 mum lightly doped n-epitaxial layers. JBS diodes exhibited 2.5kV blocking capability with reverse leakage currents below 2x10(-5) Acm(-2) at 2kV, and a forward voltage drop of 2.95V at 100Acm(-2).
引用
收藏
页码：687 / 690
页数：4
相关论文
共 50 条
  • [21] Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers
    Rang, T
    Higelin, G
    Kurel, R
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1045 - 1048
  • [22] HIGH POWER SELF-ALIGNED, TRENCH-IMPLANTED 4H-SiC JFETs
    Vamvoukakis, K.
    Stavrinidis, A.
    Stefanakis, D.
    Konstantinidis, G.
    Kayambaki, M.
    Zekentes, K.
    11TH EUROPEAN SPACE POWER CONFERENCE, 2017, 16
  • [23] 4H-SiC self-aligned implant-diffused structure for power DMOSFETs
    Suvorov, AV
    Lipkin, LA
    Johnson, GM
    Singh, R
    Palmour, JW
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1275 - 1278
  • [24] Self-aligned contacts to ion implanted S/D regions in 4H-SiC
    Ekstrom, Mattias
    Zetterling, Carl-Mikael
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 168
  • [25] Self-aligned short-channel vertical power DMOSFETs in 4H-SiC
    Matin, M
    Saha, A
    Cooper, JA
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 1393 - 1396
  • [26] A Novel Implant Masking Processes for Double Self-Aligned 4H-SiC DMOSFETs
    Jian, Jheng-Yi
    Chang, Ting-Fu
    Huang, Chih-Fang
    2015 IEEE 11TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (PEDS 2015), 2015, : 678 - 680
  • [27] Design and optimization of cell and field limiting ring termination for 1200 V 4H-SiC Junction Barrier Schottky (JBS) Diodes
    Zhang, Jingping
    Luo, Houcai
    Wu, Huan
    Wang, Zeping
    Zheng, Bofeng
    Chen, Xianping
    2022 23RD INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, ICEPT, 2022,
  • [28] RF and DC characterization of self-aligned L-band 4H-SiC static induction transistors
    Merrett, J. N.
    Sankin, I.
    Bonderenko, V.
    Smith, C. E.
    Kajfez, D.
    Casady, J. R. B.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 1223 - 1226
  • [29] High temperature behaviour of 3.5 kV 4H-SiC JBS diodes
    Brosselard, P.
    Jorda, X.
    Vellvehi, M.
    Godignon, P.
    Millan, J.
    Bergman, J. P.
    Lambert, B.
    PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 2007, : 285 - +
  • [30] High-Voltage (3.3 kV) 4H-SiC JBS Diodes
    Ivanov, P. A.
    Grekhov, I. V.
    Il'inskaya, N. D.
    Kon'kov, O. I.
    Potapov, A. S.
    Samsonova, T. P.
    Serebrennikova, O. U.
    SEMICONDUCTORS, 2011, 45 (05) : 668 - 672
12345