ICRF siliconization in HT-7 superconducting tokamak

被引：15

作者：

Gong, XZ ^{[1
]}

Li, JG ^{[1
]}

Wang, BN ^{[1
]}

Zhao, YP ^{[1
]}

Zhang, XD ^{[1
]}

Gu, XM ^{[1
]}

Li, CF ^{[1
]}

Zhen, M ^{[1
]}

Jie, YX ^{[1
]}

Zhang, SY ^{[1
]}

Wu, ZW ^{[1
]}

机构：

[1] Chinese Acad Sci, Acad Sinica, Inst Plasma Phys, Anhui 230031, Peoples R China

来源：

JOURNAL OF NUCLEAR MATERIALS | 2001年 / 290卷

关键词：

siliconization;

D O I：

10.1016/S0022-3115(00)00552-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new wall-conditioning method, ICRF plasma-assisted coating with silicon film, the so-called RF-siliconization, has been developed in HT-7 superconducting tokamak. It leads to suppression of carbon and oxygen impurities effectively. The properties of deposits were investigated by X-ray photoelectron spectroscopy (XPS). Silicon atoms have a large sticking probability on the wall and are practically less recycling. Plasma performance has been improved after ICRF siliconization, (C) 2001 Published by Elsevier Science B.V.

引用

页码：1171 / 1175

页数：5

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