Room-temperature spin injection and spin loss across a GaNAs/GaAs interface

被引：5

作者：

Puttisong, Y. ^{[1
]}

Wang, X. J. ^{[1
,2
]}

Buyanova, I. A. ^{[1
]}

Tu, C. W. ^{[3
]}

Geelhaar, L. ^{[4
,5
]}

Riechert, H. ^{[4
,5
]}

Chen, W. M. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[3] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[4] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[5] Infineon Technol, D-81730 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 01期

基金：

瑞典研究理事会;

关键词：

SEMICONDUCTOR; SPINTRONICS; GAASN;

D O I：

10.1063/1.3535615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently discovered effect of spin-filtering and spin amplification in GaNAs enables us to reliably obtain detailed information on the degree of spin loss during optical spin injection across a semiconductor heterointerface at room temperature. Spin polarization of electrons injected from GaAs into GaNAs is found to be less than half of what is generated in GaNAs by optical orientation. We show that the observed reduced spin injection efficiency is not only due to spin relaxation in GaAs, but more importantly due to spin loss across the interface due to structural inversion asymmetry and probably also interfacial point defects. (C) 2011 American Institute of Physics. [doi:10.1063/1.3535615]

引用

页数：3

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