Deposition of tungsten nitride on stainless steel substrates using plasma focus device

被引：18
作者：
Etaati, G. R. [1 ,2 ]
Hosseinnejad, M. T. [2 ]
Ghoranneviss, M. [2 ]
Habibi, M. [2 ]
Shirazi, M. [3 ]
机构：
[1] Amirkabir Univ Technol, Nucl Engn & Phys Dept, Tehran, Iran
[2] Islamic Azad Univ, Sci & Res Branch, Plasma Phys Res Ctr, Tehran, Iran
[3] Arak Univ, Fac Sci, Dept Phys, Arak, Iran
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2011年 / 269卷 / 10期
关键词：
Plasma focus device; Tungsten nitride; Thin film; XRD; SEM; AFM; PULSED-LASER DEPOSITION; TITANIUM-NITRIDE; SPUTTERED TIN; THIN-FILM; IN-SITU; COATINGS; BIAS;
D O I：
10.1016/j.nimb.2011.02.083
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Tungsten nitride (WN) films were deposited on the stainless steel-304 substrate by a 2 kJ Mather-type plasma focus device. The preparation method and characterization data are presented. X-ray diffractometer (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) were employed for the characterization of the samples obtained with different number of focus shots, respectively. The average size of crystallites (from XRD), sub-micro-structures (from SEM) and particles (from AFM images) increase when the number of shots increase from 10 to 20 then 30, then they decrease when the substrate is exposed to 40 shots. (C) 2011 Elsevier BM. All rights reserved.
引用
收藏
页码：1058 / 1062
页数：5
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