Au-Free Ohmic Contacts and Their Impact on Sub-Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures

被引：3
|
作者：
Garbe, Valentin [1 ]
Schmid, Alexander [1 ]
Seidel, Sarah [1 ]
Abendroth, Barbara [2 ]
Stoecker, Hartmut [2 ]
Doering, Philipp [3 ]
Meyer, Dirk C. [2 ]
Heitmann, Johannes [1 ]
机构：
[1] TU Bergakad Freiberg, Inst Appl Phys IAP, Leipziger Str 23, D-09599 Freiberg, Germany
[2] TU Bergakad Freiberg, Inst Expt Phys IEP, Leipziger Str 23, D-09599 Freiberg, Germany
[3] Univ Freiburg, Dept Sustainable Syst Engn INATECH, Emmy Noether Str 2, D-79108 Freiburg, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2022年 / 259卷 / 02期
关键词：
Au-free contacts; charge carriers; doping; GaN; high-electron-mobility transistors; ohmic contacts; SHEET RESISTANCE; MECHANISM; DEFECTS; TI;
D O I：
10.1002/pssb.202100312
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The impact of an Au-free Ti/Al/Ti/TiN (20/100/20/80 nm) ohmic contact metallization on an Al0.21Ga0.79N/GaN heterostructure is investigated. Using the transfer length method and Hall measurements, the sheet resistance and the carrier concentration below the contact are analyzed, depending on the post-deposition annealing temperature. It is shown that with increasing annealing temperature, the carrier density below the contact is enhanced. This is caused by the contact formation mechanism, leading to an extremely low contact end resistance to the sub-contact region of 0.04 omega mm. However, while the sub-contact semiconductor resistance is low, the contact (front) resistance to the device channel is 0.74 omega mm after annealing at 900 degrees C, indicating a depletion of the sub-contact 2D electron gas because of alloy formation.
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页数：6
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