Novel Broadband Transition for Rectangular Dielectric Waveguide to Planar Circuit Board at D Band

被引：0

作者：

Tsai, Wan-Ling ^{[1
]}

Ocket, Ilja ^{[1
,3
]}

Vaes, Joren ^{[1
]}

Cauwe, Maarten ^{[4
,5
]}

Reynaert, Patrick ^{[2
]}

Nauwelaers, Bart ^{[1
]}

机构：

[1] Katholieke Univ Leuven, ESAT TELEMIC, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium

[2] Katholieke Univ Leuven, ESAT MICAS, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium

[3] Imec, Kapeldreef 75, B-3001 Heverlee, Belgium

[4] Imec, Ctr Microsyst Technol CMST, Technologiepk 15, B-9052 Ghent, Belgium

[5] Univ Ghent, Technologiepk 15, B-9052 Ghent, Belgium

来源：

2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS | 2018年

关键词：

Transition; Millimeter-wave; packaging; dielectric waveguide;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates a D-band transition between a coplanar waveguide line and a rectangular dielectric waveguide> The transition uses an intermediate metallic wave guide partially implemented on printed circuit board (PCB) to enhance the coupling efficiency and to offer a solid assembly base. The transition was designed to convert the CPW mode to the El, mode in a dielectric rectangular waveguide. In this paper we present the design, fabrication and measurement data, showing a 7 dB measured insertion loss for a back-to-back transition connected by a 80 mm long section of polystyrene, measured with GSG on-wafer probes.

引用

页码：386 / 389

页数：4

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