Crystallization Behavior of Sputtered Amorphous Silicon Films by Blue-Multi-Laser-Diode Annealing

被引：8

作者：

Shirai, Katsuya ^{[1
]}

Mugiraneza, Jean de Dieu ^{[1
]}

Suzuki, Toshiharu ^{[1
]}

Okada, Tatsuya ^{[1
]}

Noguchi, Takashi ^{[1
]}

Matsushima, Hideki ^{[2
]}

Hashimoto, Takao ^{[2
]}

Ogino, Yoshiaki ^{[2
]}

Sahota, Eiji ^{[2
]}

机构：

[1] Univ Ryukyus, Fac Engn, Okinawa 9030213, Japan

[2] Hitachi Comp Peripherals Co Ltd, Kanagawa 2590180, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 02期

基金：

日本科学技术振兴机构;

关键词：

POLYCRYSTALLINE SILICON;

D O I：

10.1143/JJAP.50.021402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semiconductor blue-multi-laser-diode annealing (BLDA) for amorphous silicon film prepared by radio frequency (RF) sputtering was performed to investigate the controllability of the crystallization behavior by changing the scanning velocity of BLDA ranging from 300 to 500mm/s at a constant power of 3.4 W. From the evaluation results of polycrystallized Si films, crystallization occurred in solid phase under high temperature heating, and rather small grains of dendrite-like structure with distinctly preferred crystal orientation of ( 111) face was observed at the higher scanning velocity of 500 mm/s. On the other hand, crystallization occurred in liquid phase and randomly oriented rather larger grains with the size of 100-200nm were observed for the scanning velocity at 300mm/s. It was verified successfully that high crystallinity poly-Si films of arbitrary grain structure could be obtained by controlling the scanning velocity of BLDA. (C) 2011 The Japan Society of Applied Physics

引用

页数：5

共 22 条

[1] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J].