RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation

被引：15

作者：

Kolluri, Seshadri ^{[1
]}

Brown, David F. ^{[2
]}

Wong, Man Hoi ^{[1
]}

Dasgupta, S. ^{[1
]}

Keller, Stacia ^{[1
]}

DenBaars, Steven P. ^{[1
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] LLC, HRL Labs, Malibu, CA 90265 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 02期

关键词：

Deep recessed; GaN; high-electron-mobility transistor (HEMT); N-polar;

D O I：

10.1109/LED.2010.2090410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a deep-recessed nitrogen-polar AlGaN/GaN MIS-HEMT employing a V-gate structure recessed through a thick GaN cap to prevent dc-to-RF dispersion. A process for selectively dry etching N-polar GaN over AlGaN has been established to achieve repeatable etch depth for the gate recess. Devices with a drawn gate length of 0.7-mu m showed a current-gain cutoff frequency (f(T)) of 15 GHz and a power-gain cutoff frequency (f(max)) of 42 GHz. A continuous-wave output power density of 5.5 W/mm was measured at 4 GHz, with a record associated power-added efficiency of 74% and a large-signal gain of 14.5 dB at a drain bias of 24 V.

引用

页码：134 / 136

页数：3

共 15 条

[1]

Buttari D., 2004, International Journal of High Speed Electronics and Systems, V14, P756, DOI 10.1142/S012915640400279X

[2] V-gate GaNHEMTs for X-band power applications [J].

Chu, Rongming ;

Shen, Likun ;

Fichtenbaum, Nicholas ;

Brown, David ;

Chen, Zhen ;

Keller, Stacia ;

DenBaars, Steven P. ;

Mishra, Umesh K. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (09) :974-976

[3] N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology [J].

Chung, Jinwook W. ;

Piner, Edwin L. ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (02) :113-116

[4] Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth [J].

Dasgupta, Sansaptak ;

Nidhi ;

Brown, David F. ;

Wu, Feng ;

Keller, Stacia ;

Speck, James S. ;

Mishra, Umesh K. .

APPLIED PHYSICS LETTERS, 2010, 96 (14)

[5] Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition [J].

Keller, S. ;

Suh, C. S. ;

Chen, Z. ;

Chu, R. ;

Rajan, S. ;

Fichtenbaum, N. A. ;

Furukawa, M. ;

DenBaars, S. P. ;

Speck, J. S. ;

Mishra, U. K. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)

[6] Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition [J].

Keller, S. ;

Fichtenbaum, N. A. ;

Wu, F. ;

Brown, D. ;

Rosales, A. ;

DenBaars, S. P. ;

Speck, J. S. ;

Mishra, U. K. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)

[7]

Kolluri S., 2010, J APPL PHYS, V108

[8] RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate [J].

Kolluri, Seshadri ;

Pei, Yi ;

Keller, Stacia ;

Denbaars, Steven P. ;

Mishra, Umesh K. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (06) :584-586

[9] Emerging N-Face GaN HEMT Technology: A Cellular Monte Carlo Study [J].

Marino, Fabio Alessio ;

Saraniti, Marco ;

Faralli, Nicolas ;

Ferry, David K. ;

Goodnick, Stephen M. ;

Guerra, Diego .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (10) :2579-2586

[10] Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors [J].

Nidhi ;

Brown, David F. ;

Keller, Stacia ;

Mishra, Umesh K. .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (02)

← 1 2 →