Temperature-dependent I-V and C-V characteristics of chemically-grown Y0.95Ca0.05MnO3/Si thin films

In this communication, we report the results of the studies on temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics of chemical solution deposition-grown Y0.95Ca0.05MnO3/Si films and annealing temperature-induced modified interface dependence on device characteristics. X-ray diffraction results reveal the single phasic nature of films having polycrystalline growth on single crystalline (100) Si substrate. The magnetic nature of the films is confirmed from magnetic force microscopy studies. I-V and C-V characteristics show a strong dependence on the temperature and nature of the film-substrate interface, which has been understood on the basis of the annealing effect involved. Various models and theories have been used to understand the mechanism responsible for the transport across the film-substrate interface. A large rectifying ratio of similar to 1.2 x 10(4) has been obtained across the interface annealed at a lower temperature, which becomes almost double in the film annealed at a higher temperature. A large electroresistance of similar to 600% has been achieved for the interface annealed at a lower temperature. The temperature dependence of C-V behavior recorded across the interfaces of the films is discussed in detail on the basis of free and trapped charge carrier density and interface modifications.