Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm

被引:46
作者
Dong, J. [1 ]
Ueda, K. [2 ]
Kaminskii, A. A. [3 ]
机构
[1] Xiamen Univ, Sch Informat Sci & Technol, Dept Elect Engn, Xiamen 361005, Peoples R China
[2] Univ Electrocommun, Inst Laser Sci, Tokyo 1828585, Japan
[3] Russian Acad Sci, Inst Crystallog, Moscow 119333, Russia
关键词
Yb:LuAG crystal; microchip laser; wavelength shift; SOLID-STATE LASERS; YB-YAG LASER; EMISSION CROSS-SECTION; THIN DISK LASER; STIMULATED-EMISSION; YBYAG LASER; TEMPERATURE; CRYSTALS; CERAMICS; IONS;
D O I
10.1002/lapl.201010059
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The performance of laser-diode end-pumped Yb:LuAG microchip lasers has been investigated at ambient temperature without active cooling of the gain media. Efficient laser oscillation of Yb:LuAG crystals with different thickness and output couplings was achieved at 1030 and 1047 nm with slope efficiencies of 72 and 54%, correspondingly. The thermal population distribution at the terminated laser level of Yb:LuAG crystal plays an important role in the laser performance. The effects of the thickness of Yb:LuAG crystal and the transmission of output couplers on the laser oscillating wavelength and central wavelength shift were investigated by taking account into the reabsorption loss at lasing wavelength and intracavity laser intensity. [GRAPHICS] (C) 2010 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:726 / 733
页数:8
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