Line width roughness (LWR) improvement and queue time elimination by a chlorine-based process in pitch doubling for improving throughput

被引：1

作者：

Ye, Jeff J. ^{[1
]}

Ye, Benjamin B. ^{[1
]}

Esry, Tom ^{[1
]}

Deshpande, Ketan ^{[1
]}

Chafe, Doug ^{[1
]}

Fedor, Daniel ^{[1
]}

Reddy, Gopal ^{[1
]}

Nie, Jing ^{[1
]}

机构：

[1] Micron Technol Virginia, 9600 Godwin Dr, Manassas, VA 20110 USA

来源：

2021 32ND ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC) | 2021年

关键词：

LWR; space imbalance; throughput; plasma etch; resist etch;

D O I：

10.1109/ASMC51741.2021.9435718

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Both line width roughness (LWR) and queue time (Q-time) have attracted attention in the high-volume manufacturing (HVM). In this paper, we will present the results for the effect of HBr cure process on LWR in pitch doubling process with fluorine-based and chlorine-based chemistries using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Optimization of HBr cure process with Cl-based chemistry has significantly improved LWR by 60% and space imbalance by 60%. Converting from the fluorine-based etch chemistry to Cl-based chemistry leads to elimination of Q-time from resist etch to atomic layer deposition (ALD) steps, which significantly maximizes HVM production throughput by 11% and improves product quality.

引用

页数：4

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