A Self-Adaptive Blanking Circuit for IGBT Short-Circuit Protection Based on VCE Measurement

被引：0
作者：
Zhang, Xingyao [1 ]
Chen, Min [1 ]
Zhu, Nan [1 ]
Xu, Dehong [1 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310003, Zhejiang, Peoples R China
来源：
2015 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2015年
关键词：
self-adaptive blanking circuit; V-CE measurement; short-circuit protection;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In order to determine whether the IGBT short-circuit fault occurs, the collector-emitter voltage V-CE of an IGBT has been detected in the IGBT gate drivers. The blanking circuit is needed in this kind of protection method to avoid the malfunction of the short-circuit protection during IGBT turn-on transient. However, this blanking circuit should be carefully designed for different types of IGBT modules. In order to make the IGBT short-circuit protection circuit suitable for the tolerance of IGBT modules, a self-adaptive blanking circuit combined with the aforementioned short-circuit protection method based on V-CE measurement is proposed. The analysis of the proposed circuit is given, and the experimental results are included to prove the effectiveness of the proposed circuit.
引用
收藏
页码：4125 / 4131
页数：7
相关论文
共 50 条
  • [1] An Improved IGBT Short-Circuit Protection Method With Self-Adaptive Blanking Circuit Based on VCE Measurement
    Chen, Min
    Xu, Dehong
    Zhang, Xingyao
    Zhu, Nan
    Wu, Junxiong
    Rajashekara, Kaushik
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (07) : 6126 - 6136
  • [2] An application of a physics-based IGBT model to a protection circuit for short-circuit conditions
    Okamoto, Shoji
    Horiguchi, Takeshi
    Tominaga, Shinji
    Nishimura, Tadashi
    Fujita, Hideaki
    Akagi, Hirofumi
    Kinouchi, Shin-Ichi
    Oi, Takeshi
    IEEJ Transactions on Industry Applications, 2014, 134 (10) : 853 - 862
  • [3] Integrated IGBT short-circuit protection structure: Design and optimization
    Caramel, C
    Austin, P
    Sanchez, JL
    Imbernon, E
    Breil, M
    MICROELECTRONICS JOURNAL, 2006, 37 (03) : 249 - 256
  • [4] A Novel IC Measurement Without Blanking Time for Short-Circuit Protection of High-Power IPM
    Meng, Zhaoliang
    Yang, Yuan
    Gao, Yong
    Ai, Shengsheng
    Fang, Zhengpeng
    Wen, Yang
    Wu, Lei
    IEEE ACCESS, 2020, 8 : 64475 - 64485
  • [5] Short-circuit protection for an IGBT with detecting the gate voltage and gate charge
    Hasegawa, K.
    Yamamoto, K.
    Yoshida, H.
    Hamada, K.
    Tsukuda, M.
    Omura, I.
    MICROELECTRONICS RELIABILITY, 2014, 54 (9-10) : 1897 - 1900
  • [6] A short circuit protection circuit for SiC MOSFET with self-adjustive blanking time
    Liu, Tiantian
    Quan, Yuhua
    Zhou, Xuetong
    Tian, Yufei
    Cheng, Xinhong
    Huang, Xiaoyi
    IEICE ELECTRONICS EXPRESS, 2021, 18 (21):
  • [7] Tunnel Magnetoresistance-Based Short-Circuit and Over-Current Protection for IGBT Module
    Shao, Shuai
    Yu, Naipeng
    Xu, Xiaopeng
    Bai, Jianmin
    Wu, Xinke
    Zhang, Junming
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2020, 35 (10) : 10930 - 10944
  • [8] An Ultrafast Discrete Short-Circuit Protection Circuit for GaN HEMTs
    Hou, Ruoyu
    Lu, Juncheng
    Chen, Di
    2018 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2018, : 1920 - 1925
  • [9] Adaptive Current Short-Circuit Protection in Electric Systems with Distributed Generation
    Grehchenko, N. V.
    Teslya, A. G.
    Osipov, D. Y.
    Bozok, J. B.
    Koval, I. I.
    2016 INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS, ELECTRICAL DRIVES, AUTOMATION AND MOTION (SPEEDAM), 2016, : 1279 - 1283
  • [10] Research on Drain-source Voltage Integration-based Adaptive Fast Short-circuit Protection Circuit for SiC MOSFET
    Li H.
    Hu X.
    Wang Y.
    Zeng Y.
    Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2024, 44 (04): : 1542 - 1552
12345