Highly reliable 1.3-μm InGaAlAs MQW DFB lasers

被引:6
|
作者
Sudoh, TK [1 ]
Takemoto, D [1 ]
Tsuchiya, T [1 ]
Aoki, M [1 ]
Tsuji, S [1 ]
机构
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源
2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST | 2000年
关键词
D O I
10.1109/ISLC.2000.882285
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:55 / 56
页数:2
相关论文
共 50 条
  • [1] 40-Gb/s direct modulation in 1.3-μm InGaAlAs-MQW RWG DFB lasers
    Nakahara, K.
    Tsuchiya, T.
    Kitatani, T.
    Shinoda, K.
    Taniguchi, T.
    Kikawa, T.
    Aoki, M.
    2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 266 - 267
  • [2] 120°C, 25.8-Gbps Operation of 1.3-μm Directly Modulated InGaAlAs-MQW DFB Lasers
    Nakanishi, A.
    Nakajima, T.
    Sasada, N.
    Hayakawa, S.
    Sakuma, Y.
    Mukaikubo, M.
    Washino, R.
    Naoe, K.
    Nakahara, K.
    Uomi, K.
    2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2016,
  • [3] High extinction ratio operation at 40-Gb/s direct modulation in 1.3-μm InGaAlAs-MQW RWG DFB lasers
    Nakahara, K.
    Tsuchiya, T.
    Kitatani, T.
    Shinoda, K.
    Taniguchi, T.
    Kikawa, T.
    Aoki, M.
    Mukaikubo, M.
    2006 OPTICAL FIBER COMMUNICATION CONFERENCE/NATIONAL FIBER OPTIC ENGINEERS CONFERENCE, VOLS 1-6, 2006, : 446 - +
  • [4] Transmission properties of 1.3-μm InGaAlAs MQW FP lasers in 10-Gb/s uncooled operation
    Nakahara, K
    Tsuchiya, T
    Nomoto, E
    Mukaikubo, M
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2005, 23 (12) : 3997 - 4003
  • [5] Highly reliable 1.3-μm InGaAlAs buried heterostructure laser diode for 10GbE
    Sato, H
    Tsuchiya, T
    Kitatani, T
    Takahashi, N
    Oouchi, K
    Nakahara, K
    Aoki, M
    2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2004, : 731 - 733
  • [6] 1.3-μm InAsP modulation-doped MQW lasers
    Shimizu, H
    Kumada, K
    Yamanaka, N
    Iwai, N
    Mukaihara, T
    Kasukawa, A
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (06) : 728 - 735
  • [7] Simulation of 1.3-μm AlGaInAs/InP strained MQW lasers
    Hsieh, SW
    Chen, HF
    Yao, MW
    Kuo, YK
    SEMICONDUCTOR LASERS AND APPLICATIONS II, 2004, 5628 : 318 - 326
  • [8] Recent Progress in 1.3-μm Uncooled InGaAlAs Directly Modulated Lasers
    Fukamachi, T.
    Adachi, K.
    Shinoda, K.
    Tsuji, S.
    Kitatani, T.
    Tanaka, S.
    Aoki, M.
    22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2010, : 189 - +
  • [9] High Speed Directly Modulated 1.3 μm InGaAlAs/InP MQW DFB Laser
    Zhu Xuyuan
    GuoJing
    Li Zhenyu
    Zhao Lingjuan
    Wang Wei
    Liang Song
    2022 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE, ACP, 2022, : 1422 - 1423
  • [10] Direct Modulation at 56 and 50 Gb/s of 1.3-μm InGaAlAs Ridge-Shaped-BH DFB Lasers
    Nakahara, Kouji
    Wakayama, Yuki
    Kitatani, Takeshi
    Taniguchi, Takafumi
    Fukamachi, Toshihiko
    Sakuma, Yasushi
    Tanaka, Shigehisa
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (05) : 534 - 536